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ZHU Junyi 朱駿宜

ZHU Junyi / Associate Professor

PHONE: (852) 3943 6365

OFFICE: Room 309, 3/F, Science Centre North Block


  • Ph.D., Materials Science and Engineering, University of Utah, Salt Lake City, 2003-2009
  • B.S., Physics, Peking University, Beijing, China, 1994-1998


  • 2019-now, Associate Professor, Department of Physics, The Chinese University of Hong Kong, Hong Kong
  • 2013-2019, Assistant Professor, Department of Physics, The Chinese University of Hong Kong, Hong Kong

Research Interest

  • Semiconductor defects and doping
  • Electronic properties of solids
  • Surface and interface phenomena
  • Using first principles and molecular dynamics approaches
  • Elastic theory modeling.

Selected Publications

  • Hao Hu, Miao Liu, Z. F. Wang, Junyi Zhu, Dangxin Wu, Hepeng Ding, Zheng Liu, and Feng Liu: Quantum electronic stress: Density-functional-theory formulation and physical manifestation, Phys. Rev. Lett, 109, 055501, (2012).
  • Junyi Zhu: External Strain: an effective approach to tune vacancy formation and doping, invited book chapter for Doping: properties, Mechanisms and applications, (2013).
  • Joongoo Kang, Junyi Zhu, Calvin Curtis, Dan Blake, Greg Glatzmaier, Yong-Hyun Kim, and Su-Huai Wei: Atomically abrupt liquid-oxide interface stabilized by self-regulated interfacial defects: The case of Al/Al2O3 interfaces, Phys. Rev. Lett. 108, 226105 (2012).
  • Joongoo Kang, Junyi Zhu, Su-Huai Wei, Yong-Hyun Kim, and Eric Schwegler, Persistent medium-range order in liquid Al1-xCux: The microscopic origins of a liquid-liquid phase transition, Phys. Rev. Lett., 108, 115901 (2012).
  • Junyi Zhu, Su-Huai Wei, Surface and strain: Two important factors affecting doping in semiconductors, invited review by Frontiers of Materials Science, 5, 335 (2011).
  • Junyi Zhu, Su-Huai Wei, Tuning doping site and type by strain: Enhanced p-type doping in Li doped ZnO, Solid State Communication 151, 1437 (2011).
  • Junyi Zhu, Feng Liu, G. B. Stringfellow, Su-Huai Wei, Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State, Phys. Rev. Lett.105, 195503 (2010).
  • Junyi Zhu, F. Liu, G. B. Stringfellow. Dual-Surfactant effect on enhancing different p-type doping in GaP, Journal of Crystal Growth, 312, 2, 174, (2009).
  • Junyi Zhu, Feng Liu, and G. B. Stringfellow, Dual-Surfactant Effect to Enhance p-Type Doping in III-V Semiconductor Thin Films, Phys. Rev. Lett. 101, 196103 (2008).
  • Y. Han, Junyi Zhu, Feng Liu, Shao-Chun Li, Jin-Feng Jia, Yan-Feng Zhang, and Qi-Kun Xue, Coulomb Sink: A Novel Coulomb Effect on Coarsening of Metal Nanoclusters on Semiconductor Surfaces, Physics Rev. Lett. 93, 106102 (2004).


  • Metallic Surfactant for Enhancing p- and n- Type Doping in III-IV Semiconductors, with Feng Liu, Gerald Stringfellow (Filed).

Open Position

  • Two-year Postdoc in first principles calculations of electronic structures, defects in semiconductor and surface/interface studies.